HomedatasheetCM100DY-28H

CM100DY-28H Datasheet

Type = Igbt Module ;; Voltage = 1400V ;; Current = 100A ;; Circuit Configuration = Dual ;; Recommended For Designs = ;; Switching Loss Curves =
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Description

Features, Applications
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania (724) 925-7272

Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. a 1400V (VCES), 100 Ampere Dual IGBTMODTM Power Module.

Type CM Current Rating Amperes 100 VCES Volts 50) 28

Outline Drawing and Circuit Diagram Dimensions Inches Max. Millimeters Max. Dimensions Inches Dia. 0.26 M5 Metric 0.16 Millimeters Dia. M5 4.0

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 925-7272 CM100DY-28H Dual IGBTMODTM H-Series Module 100 Amperes/1400 Volts

Absolute Maximum Ratings, 25 �C unless otherwise specified

Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current Peak Collector Current Emitter Current Emitter Current-Pulse Maximum Collector Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation

* IE, VEC, Trr, Qrr & diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tj(max) rating. Junction temperature (Tj) should not increase beyond 150�C.

Symbol Tj Tstg VCES VGES IC ICM IE* IEM* Pc � VRMS
Units �C Volts Amperes Watts in-lb Grams Volts
Static Electrical Characteristics, 25 �C unless otherwise specified

Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 10mA, VCE = 100A, VGE = 100A, VGE = 125�C Total Gate Charge VCC = 100A, VGE = 15V

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, 25 �C unless otherwise specified

Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr VEC Qrr = 100A, diE/dt = 100A, VGE = 100A, diE/dt = �300A/�s VCC = 3.1 VGE = 0V, VCE = 10V Test Conditions Min. Typ. Max. Units ns V

Diode Reverse Recovery Time Emitter-Collector Voltage Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, 25 �C unless otherwise specified

Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. � Typ. � Max. 0.35 0.13 Units �C/W

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 925-7272 CM100DY-28H Dual IGBTMODTM H-Series Module 100 Amperes/1400 Volts

GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF)


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