CM1200HC-50H Datasheet

Type = Igbt Module ;; Voltage = 2500V ;; Current = 1200A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves =


Features, Applications

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE

APPLICATION Inverters, Converters, DC choppers, Induction heating, to DC converters.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Symbol VCES VGES IC ICM I E (Note 2) I EM(Note P C (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Conditions VGE = 0V VCE = 25�C Pulse = 25�C Pulse = 25�C, IGBT part Ratings Unit �C V Nm kg

Charged part to base plate, rms, sinusoidal, 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value

Symbol ICES Item Conditions VCE = V CES, = 120mA, VCE = 10V VGE = VGES , VCE = 1200A, VGE 125 �C VCE = 10V VGE = 0V VCC = 1200A, VGE = 15V VCC = 1.6 Resistive load switching operation = 1200A, VGE = 1200A, die / �s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min 4.5 Limits Typ Max Unit �s �C K/W

Collector cutoff current Gate-emitter VGE(th) threshold voltage IGES Gate-leakage current Collector-emitter VCE(sat) saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance

Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, rr , Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond � C. Pulse width and repetition rate should be such as to cause negligible temperature rise.




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