HomedatasheetCMI-12024SI

CMI-12024SI Datasheet

Single N-channel Igbt in a Hermetic TO-258 Package
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Description

Features, Applications

SMALL CASE SIZE HIGH INPUT IMPEDANCE HERMETIC PACKAGE LOW Vsat FAST SWITCHING AVAILABLE WITH FREE WHEELING DIODE u ISOLATED PACKAGE

The is a packaged 1200 Volt IGBT that features high input impedance, fast switching, and low Vsat typical of bipolar transistors. This device is ideally suited for motor drives, UPS converters and power supplies. The device is hermetically sealed for use in harsh enviroments. Also available with parallel diode.

61 Union Street Attleboro, Massachusetts 02703 Phone: (508) 226-6969 Fax: (508) 226-0938 E-Mail: sales@cmodules.com

Collector to Emitter Voltage, V CE. 1200 Gate to Emitter Voltage, VGE. �20V Continuous Collector Current, C, 90�C (Case). 24A Pulsed Collector Current, I CM. 90A Power Dissipation, D, 25�C (Case). 20W Operating Temperature Range, TJ (Junction). to +150�C Thermal Resistance Junction to Case, O JC. 1.70�C/W Thermal Resistance Junction to Ambient, OJA. 62�C/W Storage Temperature Range, TSIG. to +175�C Soldering Temperature 10S). 300�C

V(BR)CES V(BR)ECS V(BR)CES/ VCE(ON) VGE(TH) Delta VGE(TH)/ gfe ICES

Parameter Collector-to Emitter Breakdown Voltage Emitter-to Collector Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to Emitter Saturation Voltage Gate Threshold Voltage Temperature Coeff.of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current

Min. Typ-. Max. Units Conditions 1200 V VGE =0V,IC=250�A VGE =0V,IC=1.0A V/�C VGE = 45A, VGE TJ =150�C, VGE =15V VCE=VGE ,IC=250�A V

IGES Gate-to-Emitter Leakage Current Switching Characteristics Qg Total Gate Charge (turn on) Qge Gate-Emitter Charge (turn-on) Qgc Gate-Collector Charge (turn on) Td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off-Delay tf Fall Time Eon Turn-on Switching Loss Eoff Turn-Off-Switching Loss Ets Total Switching Loss Tsc Short Circuit Withstand Time Td(on) tr td(off) tf Ets LE Cies Coes Cres Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

mJ �s VCC 720, TJ=125�C VGE = 5.0 Ohms = 150�C IC= 24A, Vcc = 960V VGE = 5.0 Ohms Energy losses include tail

CMI has made every effort to insure the accuracy of this specification. However, no responsibility is assumed for possible omissions and /or inaccuracies. CMI reserves the right to make changes to this specification without further notice to improve reliability, function, or design. Changes and additions made after the publication of this data sheet will be reflected in updated sheets. CMI does not assume any liability arising out of the application or use of circuit described herein; nei-

61 Union Street Attleboro, Massachusetts 02703 Phone: (508) 226-6969 Fax: (508) 226-0938 E-Mail: sales@cmodules.com

COMPOSITE MODULES INCORPORATED SWITCHING CHARACTERISTICS: (T=25�C unless otherwise noted)
Parameter Collector-to Emitter Breakdown Voltage Emitter-to Collector Breakdown Voltage
Min. Typ-. Max. Units Conditions IC=25A, TJ=150�C, VGE =15V VCE=V GE,IC=250�A V/�C VGE=0V,IC=2.0mA

Temperature Coeff. Of Breakdown Voltage Collector-to Emitter Saturation Voltage Gate Threshold Voltage Temperature Coeff.of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current

mV/�C VCE=V 24 nC VCC = 400V VGE = 24A, VCC = 960V VGE = 5.0 Ohms Energy Losses Include "Tail" �100

mJ �s VCC 720, TJ=125�C VGE = 5.0 Ohms = 150�C IC= 24A, Vcc = 960V VGE = 5.0 Ohms Energy losses include tail


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