HomedatasheetCGY2013G/C1

CGY2013G/C1 Datasheet

CGY2013G; GSM 4 W Power Amplifier
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Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23

FEATURES Power Amplifier (PA) overall efficiency 35.5 dB gain 0 dBm input power Gain control range >55 dB Low output noise floor < -130 dBm/Hz in GSM RX band Wide operating temperature range to +85 �C LQFP 48 pin package Compatible with power ramping controller PCF5077 Compatible with GSM RF transceiver SA1620. APPLICATIONS to 915 MHz hand-held transceivers for E-GSM applications 900 MHz Time Division Multiple Access (TDMA) systems. QUICK REFERENCE DATA SYMBOL VDD IDD Po(max) Tamb Note 1. For conditions, see Chapters "AC characteristics" and "DC characteristics". ORDERING INFORMATION TYPE NUMBER CGY2013G PACKAGE NAME LQFP48 DESCRIPTION plastic low profile quad flat package; 48 leads; body mm PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature MIN. TYP. GENERAL DESCRIPTION

The is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate 3.6 V battery supply. The PA requires only 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. It can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages.

PINNING SYMBOL GND RFO/VDD4 GND DETO/VDD5 VGG2 GND RFI GND VDD1 GND VGG1 GND VDD2 GND VDD3 GND 1998 Jan 23 PIN to 48 ground power amplifier output and fourth stage supply voltage ground power sensor output and supply voltage fourth stage negative gate supply voltage ground power amplifier input ground first stage supply voltage ground first three stages negative gate supply voltage ground second stage supply voltage ground third stage supply voltage ground 3 DESCRIPTION


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