This is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
� Broadband performance � 27dBm output power (pulsed meas., -1dB gain compression) � 15dB gain � 1.5dB gain flatness � Chip size 0.10 mm
Tamb. = 25�C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power (Pulsed meas., Pin = +13dBm) Min Typ Max 10.5 Unit GHz dB dBmESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Operating frequency range Small signal gain @ Pin = +5dBm Small signal gain flatness Pulsed output power @ Pin = +13dBm Power added efficiency at saturation Input VSWR (2) Bias current
(1) These values are representative of on-wafer pulsed measurements that are made without bonding wires at the RF ports. = -1.5V, [S] parameter measurements.
Positive supply voltage Maximum power dissipated Negative supply voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s.