The is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 �m Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form.
W-band LO and RF frequency range Low conversion loss IF from to 100MHz High LO/RF isolation High LO/AM noise rejection Very low IF noise Low LO input power Small chip size: 0.10 mmTypical conversion characteristic LO power ; IF=10MHz (measurement in test fixture)
LO,RF frequency range IF frequency range Conversion loss LO/RF isolation IF noise density @ 100kHz
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Tamb. = 25�C, used according to section "Typical bias and IF configuration" and "Typical assembly and RF configuration" SymbolF_LO,F_RF F_IF Lc P_LO VSWR_LO VSWR_RF IF_load I_LO/RF R_AM_LO N_IF Id
LO,RF frequency range IF frequency range Conversion loss LO input power LO port VSWR (50) RF port VSWR (50) IF load impedance LO/RF isolation LO AM noise rejection IF noise density 100kHz (1) Supply current (2)(1) Measured 50 IF load impedance. (2) See on chapter "Typical bias and IF configuration"
Symbol Id P_LO P_RF Top Tstg Supply current Maximum peak input power overdrive at LO port (2) Maximum peak input power overdrive at RF port (2) Operating temperature range Storage temperature range Parameter Values to +125 Unit mA dBm �C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s
Unit = �m External chip size x 1170 Chip thickness 10 HF Pads x 118 DC/IF Pads x 100 Pin number LO RF GND IF C_ext +V Pin name Description Ground : should not be bonded. If required, please ask for more information. LO input RF input Ground (optional) Not Connected IF output Bias decoupling Positive supply voltage