The is a multifunction chip (MFC) which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25�m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Broadband performance : 36-44 GHz RF 2.5dB conversion gain 0dBm LO input power +8dBm input power (1dB gain comp.) DC power consumption, @ 4.25V Chip size 0.10 mmFRF FLO FIF Gc RF frequency range LO frequency range IF frequency range Conversion Gain
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
RF frequency range LO frequency range IF frequency range Conversion Gain LO Input power LO Leakage on IF (for PLO=0dBm)
LO_RF Lk LO Leakage on RF (for PLO=0dBm) RF_IF P1dB LO Match RF Match IF Match Id RF Leakage on IF (for PRF=-5dBm) Input power at 1dB gain compression LO Matching RF Matching IF Matching Bias currentA wire bond of typically 0.15 nH will improve the input and output matching.
Id Ta Tstg Drain bias voltage Drain bias current Operating temperature range Storage temperature range(1) Operation of device above anyone of these parameters may cause permanent damage.
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