HomedatasheetBLF245,112

BLF245,112 Datasheet

Transistors
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Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor( BLF245,112 ) is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request BLF245,112 Features • High power gain• Low noise figure• Easy power control• Good thermal stability• Withstands full load mismatch.
Features

Parameters

[{"Name":"Frequency:","Value":"175 MHz"},{"Name":" Output Power:","Value":"30 W"},{"Name":"Drain-Source Breakdown Voltage:","Value":"65 V"},{"Name":" Continuous Drain Current:","Value":"6 A"},{"Name":"Gate-Source Breakdown Voltage:","Value":"+/- 20 V"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature:","Value":"- 65 C"},{"Name":" Power Dissipation:","Value":"68 W"},{"Name":"Resistance Drain-Source RDS (on):","Value":"750 mOhms"},{"Name":"","Value":""}]

Manufacturer information

ONSEMI [ON SEMICONDUCTOR]
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