HomedatasheetBSP250,115

BSP250,115 Datasheet

Transistors
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Description

P-channel enhancement( BSP250,115 ) mode vertical D-MOS transistor in a SOT223 plastic SMD package. BSP250,115 Features • High-speed switching• No secondary breakdown• Very low on-resistance. BSP250,115 Applications • Low-loss motor and actuator drivers• Power switching.
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage:","Value":"- 30 V"},{"Name":"Gate-Source Breakdown Voltage:","Value":"20 V"},{"Name":"Continuous Drain Current:","Value":"- 3 A"},{"Name":"Drain-Source On Resistance:","Value":"330 mOhms"},{"Name":" Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Forward Transconductance - Min:","Value":"2 S, 1 S"},{"Name":"Minimum Operating Temperature:","Value":"- 65 C"},{"Name":"Gate Charge Qg:","Value":"10 nC"},{"Name":" Power Dissipation:","Value":"5 W"},{"Name":"","Value":""}]

Manufacturer information

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