DFM400NXM33-A000 Datasheet

High Speed


Features, Applications

Fast Recovery Diode Module Prelimianry Information

s Low Reverse Recovery Charge s High Switching Speed s Low Forward Voltage Drop s Isolated Base s Dual Diodes Can Be Paralleled for 800A Rating s MMC Baseplate With AlN Substrates


s Brake Chopper Diode s Boost and Buck Converters s Free-wheel Circuits s Motor Drives s Resonant Converters s Induction Heating s Multi-level Switch Inverters The is a dual 3300 volt, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

External connection for single 800A diode application Fig. 1 Circuit diagram

Note: When ordering, please use the complete part number. Outline type code: N (See package details for further information) Fig. 2 Electrical connections - (not to scale)

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25�C unless stated otherwise Symbol VRRM IF IFM I2t Pmax Visol Qpd Parameter Repetitive peak reverse voltage Forward current (per arm) Max. forward current I2t value fuse current rating Maximum power dissipation Isolation voltage Partial discharge Tvj = 125�C DC, Tcase = 70�C Tcase = 10ms, Tvj = 125�C Tcase = 25�C, Tvj = 125�C Commoned terminals to base plate. AC RMS, 1 min, 1800V, 50Hz RMS Test Conditions Max. Units kV pC

Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): AlN AlSiC 20mm 175 Test Conditions Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Tstg Junction temperature Storage temperature range Screw torque Mounting - M6 Electrical connections - M8 Mounting torque 5Nm (with mounting grease) Nm 6 �C/kW Min. Typ. -

Parameter Thermal resistance - diode (per arm)

Tvj = 25�C unless stated otherwise. Symbol IRM VF Parameter Peak reverse current Forward voltage Test Conditions = 3300V, Tvj = 400A, Tvj 125�C L Inductance Min. Typ. 2.5 25 Max. 30 Units V nH

Tvj = 25�C unless stated otherwise. Symbol Irr Qrr Erec Parameter Peak reverse recovery current Reverse recovery charge Reverse recovery energy Test Conditions = 400A, dIF/dt = 1800V Min. Typ. 280 300 Max. Units �C mJ

Tvj = 125�C unless stated otherwise. Symbol Irr Qrr Erec Parameter Peak reverse recovery current Reverse recovery charge Reverse recovery energy Test Conditions = 400A, dIF/dt = 1800V Min. Typ. 450 550 Max. Units �C mJ



Download DataSheet PDF View and Download

Manufacturer information

Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us


One to One Customer Service