HomedatasheetFM25V10-GTR

FM25V10-GTR Datasheet

3V F-RAM Memory
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Description

Description
The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.

Features
1M bit Ferroelectric Nonvolatile RAM
• Organized as 131,072 x 8 bits
• High Endurance 100 Trillion (1014) Read/Writes
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI
• Up to 40 MHz Frequency
• Direct Hardware Replacement for Serial Flash
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme
• Hardware Protection
• Software Protection

Device ID and Serial Number
• Device ID reads out Manufacturer ID & Part ID
• Unique Serial Number (FM25VN10)

Low Voltage, Low Power
• Low Voltage Operation 2.0V – 3.6V
• 90μA Standby Current (typ.)
• 5μA Sleep Mode Current (typ.)

Industry Standard Configurations
• Industrial Temperature -40 C to +85 C
• 8-pin “Green”/RoHS SOIC Package

 

Features

Parameters

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Manufacturer information

CYPRESS SEMICONDUCTOR

Cypress Semiconductor - Cypress targets innovative markets growing faster than the overall semiconductor industry, including key segments of the automotive, industrial, home automation and appliances, medical products and consumer electronics businesses. With the help of Digi-Key Electronics, we supply customers with market-leading solutions based on our MCUs, wireless SoCs, memories, analog ICs and USB controllers. Our world-class wireless technology gives us an unparalleled position in the fast-growing Internet of Things, a business that cuts across our conventional markets and gives us a stake in exciting, next-generation segments such as connected and autonomous cars.

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