HomedatasheetMJE13003G-E-F-T6S-R

MJE13003G-E-F-T6S-R Datasheet

NPN EPITAXIAL SILICON TRANSISTOR
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Description

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION

The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive ircuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.

„ FEATURES
*Collector-Emitter Sustaining Voltage: VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.

Features

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Manufacturer information

UNISONIC TECHNOLOGIES
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