HomedatasheetMJE13003G-P-F-T92-T

MJE13003G-P-F-T92-T Datasheet

NPN SILICON POWER TRANSISTOR
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Description

DESCRIPTION
These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. 

FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability

„  APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits

Features

Parameters


Manufacturer information

UNISONIC TECHNOLOGIES
Warm Hint

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