NE85634-A Datasheet

RF Transistors (BJT)


NECs NE856( NE85634-A ) series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NECs titanium/platinum/gold metallization system and their direct nitride passivated base surface process. The NE856 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles. NE85634-A Features • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz• LOW NOISE FIGURE: 1.1 dB at 1 GHz• HIGH COLLECTOR CURRENT: 100 mA• HIGH RELIABILITY METALLIZATION• LOW COST


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