HomedatasheetNX5312EK-AZ

NX5312EK-AZ Datasheet

LASER DIODE
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Description

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

DESCRIPTION
The NX5312 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.

FEATURES
•  Optical output power  Po=5.0 mW
•  Lowthreshold current  lth= 6mA
•  Differential Efficiency  ηd=0.45 W/A
•  Wide operating temperature range  TC= −40 to +85°C
•  InGaAs monitor PIN-PD
•  CAN package  φ5.6 mm
•  Focal point  6.35 mm

APPLICATIONS
•  STM-1 (L-1.1), STM-4 (S-4.1), ITU-Trecommendations
•  FTTH(Fiber ToThe Home) system
 

Features

Parameters


Manufacturer information

CALIFORNIA EASTERN LABORATORIES.
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