SI4542DY-T1-GE3 Datasheet



This complementary MOSFET device( SI4542DY-T1-GE3 ) is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. SI4542DY-T1-GE3 Features• Halogen-free According to IEC 61249-2-21 Definition• TrenchFET® Power MOSFET• 100 % Rg Tested• Compliant to RoHS Directive 2002/95/EC


[{"Name":"Drain-Source Breakdown Voltage: ","Value":"30 V "},{"Name":"Gate-Source Breakdown Voltage: ","Value":"+/- 20 V "},{"Name":"Continuous Drain Current: ","Value":"6.9 A, 6.1 A "},{"Name":"Resistance Drain-Source RDS (on): ","Value":"25 mOhms, 32 mOhms "},{"Name":"Maximum Operating Temperature: ","Value":"+ 150 C "},{"Name":"Minimum Operating Temperature: ","Value":"- 55 C "},{"Name":"Power Dissipation: ","Value":"2 W "},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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