HomedatasheetSI1013X-T1-GE3

SI1013X-T1-GE3 Datasheet

Transistors
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Description

The SI1013X-T1-GE3 fits MOSFET 20V 350mA 175mW 1.2 ohms @ 4.5V SI1013X-T1-GE3 Features • Halogen-free Option Available • High-Side Switching • Low On-Resistance: 1.2 Ω • Low Threshold: 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation • TrenchFET® Power MOSFETs • 2000 V ESD Protection SI1013X-T1-GE3 Application • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers
Features

Parameters

[{"Name":" Drain-Source Breakdown Voltage:","Value":"20 V"},{"Name":"Gate-Source Breakdown Voltage:","Value":"+/- 6 V"},{"Name":"Continuous Drain Current:","Value":"0.35 A"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Power Dissipation:","Value":"250 mW "},{"Name":"Rise Time:","Value":"9 ns"},{"Name":" Typical Turn-Off Delay Time:","Value":"35 ns"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

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