SST29LE010-150-3C-WH Datasheet

1 Megabit (128K x 8) Page Mode EEPROM


The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The 29EE010/29LE010/29VE010 write with a single power supply. Internal Erase/Program is transparent to the user. The 29EE010/29LE010/29VE010 conform to JEDEC standard pinouts for byte-wide memories.

• Single Voltage Read and Write Operations
– 5.0V-only for the 29EE010
– 3.0V-only for the 29LE010
– 2.7V-only for the 29VE010
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-write Cycle Time: 39 µs(typical)
• Fast Read Access Time
– 5.0V-only operation: 90 and 120 ns
– 3.0V-only operation: 150 and 200 ns
– 2.7V-only operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
– Internal Vpp Generation
• End of Write Detection
– Toggle Bit
– Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard Byte-wide EEPROM Pinouts
• Packages Available
– 32-Pin TSOP (8x20 & 8x14 mm)
– 32-Lead PLCC
– 32 Pin Plastic DIP



Manufacturer information

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