HomedatasheetSST39SF020A-70-4C-NHE-T

SST39SF020A-70-4C-NHE-T Datasheet

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Description

The SST39SF020A-70-4C-NHE-T are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF020A-70-4C-NHE-T devices write (Program or Erase) with a 4.5-5.5V power supply. The SST39SF020A-70-4C-NHE-T devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39SF020A-70-4C-NHE-T devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. SST39SF020A-70-4C-NHE-T Features • Organized as 128K x8 / 256K x8 / 512K x8• Single 4.5-5.5V Read and Write Operations• Superior Reliability• Low Power Consumption(typical values at 14 MHz)• Sector-Erase Capability• Latched Address and Data• All devices are RoHS compliant
Features

Parameters

[{"Name":"Memory Size:","Value":"2 Mbit"},{"Name":"Access Time:","Value":"70 ns"},{"Name":" Supply Voltage - Max:","Value":"5.5 V"},{"Name":"Supply Voltage - Min:","Value":"4.5 V"},{"Name":"Maximum Operating Current:","Value":"10 mA"},{"Name":"Operating Temperature:","Value":"+ 70 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

TEXAS INSTRUMENTS TEXAS INSTRUMENTS
Warm Hint

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