SST39VF512-75-4C-WME Datasheet

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash


The SST39LF512, SST39LF010,SST39LF020, SST39LF040 and SST39VF512, SST39VF010,SST39VF020, SST39VF040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF512/010/020/040
– 2.7-3.6V for SST39VF512/010/020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 45 ns for SST39LF512/010/020/040
– 55 ns for SST39LF020/040
– 70 ns for SST39VF512/010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
  1 second (typical) for SST39LF/VF512
  2 seconds (typical) for SST39LF/VF010
  4 seconds (typical) for SST39LF/VF020
  8 seconds (typical) for SST39LF/VF040
• Automatic Write Timing
– Internal VPPGeneration
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
• All devices are RoHS compliant



Manufacturer information

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