HomedatasheetPESD3V3L1UB,115

PESD3V3L1UB,115 Datasheet

Transistor Output Optocouplers
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Description

The PESD3V3L1UB,115 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-linepackage. The PESD3V3L1UB,115 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. PESD3V3L1UB,115 Features • AC input response (FOD814 only)• Applicable to Pb-free IR reflow soldering• Compact 4-pin package• High input-output isolation voltage of 5000Vrms• Minimum BVCEO of 70V guaranteed• Higher operating temperatures (versus H11AXXX counterparts) PESD3V3L1UB,115 Applications • AC line monitor• Unknown polarity DC sensor• Telephone line interface FOD617 and FOD817 Series• Power supply regulators• Digital logic inputs• Microprocessor inputs
Features

Parameters

[{"Name":"Maximum Collector Emitter Voltage:","Value":" 70 V"},{"Name":" Maximum Collector Emitter Saturation Voltage:","Value":"0.2 V"},{"Name":"Maximum Forward Diode Voltage:","Value":"1.4 V"},{"Name":"Maximum Input Diode Current:","Value":"50 mA"},{"Name":"Maximum Collector Current:","Value":"50 mA"},{"Name":" Maximum Power Dissipation:","Value":"200 mW"},{"Name":" Maximum Operating Temperature:","Value":"+ 110 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Maximum Reverse Diode Voltage:","Value":"6 V"},{"Name":"Maximum Rise/Fall Time:","Value":"18 us"}]

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