HomedatasheetQ62703-Q1089

Q62703-Q1089 Datasheet

GaAlAs Infrared Emitters (880 nm)
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Description

Features
● GaAIAs infrared emitting diode, fabricated in
   a liquid phase epitaxy process
● Anode is electrically connected to the case
● High reliability
● Matches all Si-Photodetectors
● Hermetically sealed package
● SFH 480: Same package as SFH 216
● SFH 481: Same package as BPX 43, BPY 63
● SFH 482: Same package as BPX 38, BPX 65

Applications
● Photointerrupters
● IR remote control of various equipmet

Features

Parameters


Manufacturer information

SIEMENS AG
Warm Hint

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