TLP621-4 Datasheet

GaAs Ired & Photo−Transistor


The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621−2 offers two isolated channels in an eight lead plastic DIP, which the TLP621−4 provides four isolated channels in a sixteen plastic DIP.
 Collector−emitter voltage: 55 V (min.)
 Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)



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