HomedatasheetV10P10-M3/86A

V10P10-M3/86A Datasheet

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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Description

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.453 V at IF = 5 A

FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward volatge drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
•Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection
applications.

Features

Parameters


Manufacturer information

VISHAY SEMICONDUCTORS
Warm Hint

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