X28HC256EM-12RR Datasheet

LOW POWER CMOS EEPROM with hi-speed page write capability


The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8 seconds. The X28HC256 also features DATA Polling and Toggle Bit Polling, two methods of providing early end of write detection.

• Access time: 70ns
• Simple byte and page write
   - Single 5V supply
   - No external high voltages or VP-P control circuits
   - Self-timed
   - No erase before write
   - No complex programming algorithms
   - No overerase problem
• Low power CMOS
   - Active: 60mA
   - Standby: 500µA
• Software data protection
   - Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write™ cell
   - Endurance: 1,000,000 cycles
   - Data retention: 100 years
• Early end of write detection
   - DATA polling
   - Toggle bit polling
• Pb-free plus anneal available (RoHS compliant)




Manufacturer information

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