HomedatasheetAD711JR

AD711JR Datasheet

Precision, Low Cost, High Speed, BiFET Op Amp
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Description

The AD711JR is a high speed, precision monolithic operational amplifier offering high performance at very modest prices. Its very low offset voltage and offset voltage drift are the results of advanced laser wafer trimming technology. These performance benefits allow the user to easily upgrade existing designs that use older precision BiFETs and, in many cases, bipolar op amps. AD711JR Features • Enhanced Replacement for LF411 and TL081• AC PERFORMANCE Settles to ±0.01% in 1.0 us 16 V/us min Slew Rate (AD711J) 3 MHz min Unity Gain Bandwidth (AD711J)• DC PERFORMANCE 0.25 mV max Offset Voltage: (AD711C) 3 uV/C max Drift: (AD711C) 200 V/mV min Open-Loop Gain (AD711K)• 4 uV p-p max Noise, 0.1 Hz to 10 Hz (AD711C) Available in Plastic Mini-DIP, Plastic SOIC, Hermetic Cerdip, and Hermetic Metal Can Packages• MIL-STD-883B Parts Available Available in Tape and Reel in Accordance with EIA-481A Standard Surface Mount (SOIC) Dual Version: AD712
Features

Parameters

[{"Name":"Slew Rate ","Value":"20 V/μs"},{"Name":"-3db Bandwidth ","Value":"4MHz"},{"Name":"Current - Input Bias ","Value":"15pA"},{"Name":"Voltage - Input Offset ","Value":"300μV"},{"Name":"Current - Supply ","Value":"2.5mA"},{"Name":"Current - Output / Channel ","Value":"25mA"},{"Name":"Voltage - Supply, Single/Dual (±) ","Value":"9 V ~ 36 V, ±4.5 V ~ 18 V"},{"Name":"Operating Temperature ","Value":"0°C ~ 70°C"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

GESS [GE SOLID STATE]
Warm Hint

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