HomedatasheetAO3407A

AO3407A Datasheet

MOSFET
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Description

The AO3407A/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. AO3407A and AO3407AL are electrically identical.-RoHS Compliant-AO3407AL is Halogen Free. AO3407A Features &bull; VDS (V) = -30V&bull; ID = -4.3A (VGS = -10V)&bull; RDS(ON) < 48m&Omega; (VGS = -10V)&bull; RDS(ON) < 78m&Omega; (VGS = -4.5V)
Features

Parameters

[{"Name":"Transistor Polarity","Value":"P-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"- 30 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V "},{"Name":"Continuous Drain Current","Value":"- 3.6 A "},{"Name":"Drain-Source On Resistance","Value":"103 mOhms "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SOT-23 "},{"Name":"Packaging","Value":"Reel "},{"Name":"Gate Charge Qg","Value":"4.8 nC "},{"Name":"Power Dissipation","Value":"1.3 W "}]

Manufacturer information

SILICON LABORATORIES
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