Home datasheet AO4412

AO4412

N-Channel Enhancement Mode Field Effect Transistor
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Description

General Description
The AO4412 uses advanced trench technology to provide excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product AO4412 is Pb-free (meets ROHS & Sony 259 specifications). AO4412L is a Green Product ordering option. AO4412 and AO4412L are electrically identical.

Features
• VDS (V) = 30V
• ID = 8.5A (VGS = 10V)
• RDS(ON) < 26mΩ (VGS = 10V)
• RDS(ON) < 34mΩ (VGS = 4.5V)

 

Features

Parameters

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Manufacturer information

ALPHA AND OMEGA SEMICONDUCTOR
Warm Hint

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