Home datasheet AO4446

AO4446

30V N-Channel MOSFET
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Description

General Description
The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications.

Product Summary
   VDS (V) = 30V
   ID = 15A (VGS = 10V)
   RDS(ON) < 8.5mΩ (VGS = 10V)
   RDS(ON) < 14.5mΩ (VGS = 4.5V)
  
   100% UIS Tested
   100% Rg Tested

Features

Parameters

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Manufacturer information

ALPHA AND OMEGA SEMICONDUCTOR
Warm Hint

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