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AO4456

N-Channel Enhancement Mode Field Effect Transistor
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Description

General Description
The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4456 is Pb-free (meets ROHS & Sony 259 specifications). AO4456 is a Green Product ordering option. AO4456 and AO4456 are electrically identical.

Features
  VDS (V) = 30V
  ID =20A (VGS = 10V)
  RDS(ON) < 4.6mΩ (VGS = 10V)
  RDS(ON) < 5.6mΩ (VGS = 4.5V)

 

Features

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