AO4468 Datasheet



AO4468 -MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7.2nC AO4468 Features •Very Low RDS(on) at 4.5V VGS•Ultra-Low Gate Impedance•Fully Characterized Avalanche Voltage and Current•100% Tested for RG•Lead-Free AO4468 Applications •Control FET for Notebook Processor Power•Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems


[{"Name":"Drain-Source Breakdown Voltage:","Value":"30 V"},{"Name":" Gate-Source Breakdown Voltage:","Value":"20 V"},{"Name":"Continuous Drain Current:","Value":"11 A"},{"Name":"Resistance Drain-Source RDS (on):","Value":"18.2 mOhms"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Fall Time:","Value":"3.1 ns"},{"Name":"Gate Charge Qg:","Value":"7.2 nC"},{"Name":"Rise Time:","Value":"6.2 ns"},{"Name":"","Value":""}]

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