Home datasheet AO4900

AO4900

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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Description

General Description
The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further.Standard Product AO4900 is Pb free (meets ROHS & Sony 259 specifications).
AO4900L is a Green Product ordering option.
AO4900 and AO4900L are electrically identical.

Features
  VDS (V) = 30V
  ID = 6.9A (VGS = 10V)
  RDS(ON) < 27m (VGS = 10V)
  RDS(ON) < 32m (VGS = 4.5V)
  RDS(ON) < 50m (VGS = 2.5V)

SCHOTTKY
  VDS (V) = 30V, IF = 3A, VF=0.5V@1A

 

Features

Parameters

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Manufacturer information

ALPHA AND OMEGA SEMICONDUCTOR
Warm Hint

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