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AO4932

Dual N-Channel Enhancement Mode Field Effect Transistor
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Description

General Description
The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further.

Product Summary
FET1(N-Channel)                                         FET2(N-Channel)
VDS = 30V                                                30V
ID= 11A (VGS=10V)                                     8A (VGS=10V)
RDS(ON)                                                   RDS(ON)
< 12.5mΩ(VGS=10V)                                   < 19mΩ(VGS=10V)
< 15mΩ(VGS=4.5V)                                    < 23mΩ(VGS=4.5V)
100% UIS Tested                                        100% UIS Tested
100% Rg Tested                                         100% Rg Tested

Features

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