Home datasheet AO4932


Asymmetric Dual N-Channel MOSFET


General Description
The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.  A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further.

FET1(N-Channel)                            FET2(N-Channel)
VDS= 30V                                    30V
ID = 11A (VGS=10V)                       8A (VGS=10V)
RDS(ON)                                      RDS(ON)
< 12.5mΩ(VGS=10V)                     < 19mΩ(VGS=10V)
< 15mΩ(VGS=4.5V)                      < 23mΩ(VGS=4.5V)



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