Home datasheet AOD425

AOD425

P-Channel Enhancement Mode Field Effect Transistor
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Description

P-Channel Enhancement Mode Field Effect Transistor

General Description
The AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected.

-RoHS Compliant
-Halogen Free*

Features
VDS(V) = -30V
ID= -20A (VGS= -10V)
RDS(ON)< 17mΩ(VGS= -10V)
RDS(ON)< 35mΩ(VGS= -5V)

                 ESD Protected!
                 100% Rg Tested!

Features

Parameters

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Manufacturer information

ALPHA AND OMEGA SEMICONDUCTOR
Warm Hint

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