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AP30G120ASW

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
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Description

Features
▼ High Speed Switching
▼ Low Saturation Voltage
   VCE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant

 

Features

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