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256K (32K x 8) Paged Parallel EEPROM


The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 200 µA.

• Fast Read Access Time – 150 ns
• Automatic Page Write Operation
   – Internal Address and Data Latches for 64 Bytes
   – Internal Control Timer
• Fast Write Cycle Times
   – Page Write Cycle Time: 3 ms or 10 ms Maximum
   – 1 to 64-byte Page Write Operation
• Low Power Dissipation
   – 50 mA Active Current
   – 200 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
   – Endurance: 104 or 105 Cycles
   – Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Full Military, Commercial, and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option


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