HomedatasheetAUIRF4905L

AUIRF4905L Datasheet

Transistors
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Description

AUIRF4905L Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. AUIRF4905L Features • Advanced Planar Technology• Low On-Resistance• Dynamic dV/dT Rating• 175°C Operating Temperature• Fast Switching• Fully Avalanche Rated• Repetitive Avalanche Allowed up to Tjmax• Lead-Free, RoHS Compliant• Automotive Qualified
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"- 55 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V"},{"Name":"Continuous Drain Current","Value":"- 74 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"20 mOhms"},{"Name":"Maximum Operating Temperature","Value":"+ 175 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

GESS [GE SOLID STATE]
Warm Hint

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