HomedatasheetAUIRF7416Q

AUIRF7416Q Datasheet

Transistors
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Description

AUIRF7416Q Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. AUIRF7416Q Features • Advanced Process Technology• Low On-Resistance• P-Channel MOSFET• Dynamic dV/dT Rating• 150°C Operating Temperature• Fast Switching• Fully Avalanche Rated• Lead-Free, RoHS Compliant• Automotive Qualified
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"- 30 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V"},{"Name":"Continuous Drain Current","Value":"- 10 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"35 mOhms"},{"Name":"Gate Charge Qg","Value":"61 nC"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

TECCOR [TECCOR ELECTRONICS]
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