HomedatasheetBC856BDW1T1G

BC856BDW1T1G Datasheet

Transistors
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Description

BC856BDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. BC856BDW1T1G Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
Features

Parameters

[{"Name":"Collector- Base Voltage VCBO","Value":"- 80 V"},{"Name":"Collector- Emitter Voltage VCEO Max","Value":"- 65 V"},{"Name":"Emitter- Base Voltage VEBO","Value":"5 V"},{"Name":"Collector-Emitter Saturation Voltage","Value":"- 0.65 V"},{"Name":"Maximum DC Collector Current","Value":"0.1 A"},{"Name":"Gain Bandwidth Product fT","Value":"100 MHz"},{"Name":"DC Collector/Base Gain hfe Min","Value":"220 at 2 mA at 5 V"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Continuous Collector Current","Value":"- 0.1 A"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"}]

Manufacturer information

VISHAY/SILICONIX
Warm Hint

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