BDX34C Datasheet

Transistors Darlington


The BDX33B and BDX34C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.The complementary PNP types are BDX34B and BDX34C respectively. BDX34C Features • High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0• Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B VCEO(sus) = 100 Vdc (min.) — BDX33C, 34C• Low Collector–Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc — BDX33B, 33C/34B, 34C• Monolithic Construction with Build–In Base–Emitter Shunt resistors• TO–220AB Compact Package


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