BLF368 Datasheet



BLF368 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors. BLF368 Features • High power gain• Easy power control• Good thermal stability• Gold metallization ensures excellent reliability.


[{"Name":" Frequency","Value":"225 MHz"},{"Name":"Gain","Value":"13.5 dB"},{"Name":"Output Power","Value":"300 W"},{"Name":"Drain-Source Breakdown Voltage","Value":"65 V"},{"Name":"Continuous Drain Current","Value":"25 A"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature","Value":"- 65 C"},{"Name":"","Value":""},{"Name":"","Value":""}]

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