BSH111 Datasheet



The BSH111 is N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. BSH111 Features • TrenchMOS™ technology• Very fast switching• Low threshold voltage• Subminiature surface mount package. BSH111 Applications • Battery management• High speed switch• Logic level translator.


[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"55 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 10 V "},{"Name":"Continuous Drain Current","Value":"335 mA "},{"Name":"Resistance Drain-Source RDS (on)","Value":"2.4 Ohms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SOT-23 "},{"Name":"Packaging","Value":"Reel "}]

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