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BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Description

General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.

Features
- BSS100: 0.22A, 100V. RDS(ON) = 6W @ VGS = 10V.
  BSS123: 0.17A, 100V. RDS(ON) = 6W @ VGS = 10V
- High density cell design for extremely low RDS(ON).
- Voltage controlled small signal switch.
- Rugged and reliable.

 

Features

Parameters

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Manufacturer information

FAIRCHILD SEMICONDUCTOR

Fairchild has a rich history as a pioneer in the semiconductor industry and that pioneering spirit endures today. In an era where diversity can dilute focus and hamper innovation, we specialize in the development and manufacturing of a complete portfolio of low- to high-power solutions for the mobile, industrial, cloud, automotive, lighting, and computing industries. Fairchild is one of the most reliable partners in the industry, offering the shortest time from concept to silicon, expert FAEs for customer support, and a flexible, multi-source supply chain. Our vision is clear – anticipate the power efficiencies demanded by tomorrow’s electronic products and deliver an amazing design experience

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