HomedatasheetCA3039M96

CA3039M96 Datasheet

Diode Array
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Description

Features, Applications

Description

The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit construction assures excellent static and dynamic matching of the diodes, making the array extremely useful for a wide variety of applications in communication and switching systems. Five of the diodes are independently accessible, the sixth shares a common terminal with the substrate. For applications such as balanced modulators or ring modulators where capacitive balance is important, the substrate should be returned a DC potential which is significantly more negative (with respect to the active diodes) than the peak signal applied.

Features

Six Matched Diodes on a Common Substrate Excellent Reverse Recovery Time. 1ns (Typ) VF Match. 5mV (Max) Low Capacitance. = 0.65pF (Typ) = -2V

Applications

Ultra-Fast Low Capacitance Matched Diodes for Applications in Communications and Switching Systems Balanced Modulators or Demodulators Ring Modulators High Speed Diode Gates Analog Switches

PART NUMBER CA3039M CA3039M96 TEMP. RANGE (oC) to 125 PACKAGE 12 Pin Metal Can 14 Ld SOIC 14 Ld SOIC Tape and Reel PKG. NO. T12.B M14.15

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright � Intersil Corporation 1999

Inverse Voltage (PIV) for: D6. 0.5V Diode-to-Substrate Voltage (VDI) for D5.20V, -1V (Terminal 12 to Terminal 10) DC Forward Current (IF). 25mA Recurrent Forward Current (IF). 100mA Forward Surge Current (IF(SURGE)). 100mA

Thermal Resistance (Typical, Note 1) JA (oC/W) JC (oC/W) Metal Can Package. 200 120 SOIC Package. 220 N/A Maximum Power Dissipation (Any One Diode). 100mW Maximum Junction Temperature (Metal Can Package). 175oC Maximum Junction Temperature (Plastic Package). 150oC Maximum Storage Temperature Range. to 150oC Maximum Lead Temperature (Soldering 10s). 300oC (SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: JA is measured with the component mounted on an evaluation PC board in free air.

= 25oC; Characteristics apply for each diode unit, Unless Otherwise Specified SYMBOL VF TEST CONDITIONS = 10mA MIN 5 20 TYP MAX UNITS

DC Reverse Breakdown Voltage DC Reverse Breakdown Voltage Between Any Diode Unit and Substrate DC Reverse (Leakage) Current (Figure 2) DC Reverse (Leakage) Current Between Any Diode Unit and Substrate (Figure 3) Magnitude of Diode Offset Voltage (Note 2) (Figure 1) Temperature Coefficient - VF2| (Figure 4)

DC Forward Voltage Drop for Anode-toSubstrate Diode (DS) Reverse Recovery Time Diode Resistance (Figure 6) Diode Capacitance (Figure 7) Diode-to-Substrate Capacitance (Figure 8) NOTE:

2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units.

0.8 DC FORWARD VOLTAGE (V) 6 DIODE OFFSET VOLTAGE (mV) DC REVERSE CURRENT (nA) DIODE OFFSET = -4V
FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND DIODE OFFSET VOLTAGE vs DC FORWARD CURRENT
FIGURE 3. DC REVERSE (LEAKAGE) CURRENT BETWEEN D4, D5 AND SUBSTRATE vs TEMPERATURE
FIGURE 4. DIODE OFFSET VOLTAGE (ANY DIODE) vs TEMPERATURE
FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs TEMPERATURE
FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC FORWARD CURRENT

Features

Parameters

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Manufacturer information

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