HomedatasheetCA3082

CA3082 Datasheet

General Purpose
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Description

Features, Applications

General Purpose High Current NPN Transistor Arrays

CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. The CA3081 and CA3082 are capable of directly driving seven segment displays, and light emitting diode (LED) displays. These types are also well suited for a variety of other drive applications, including relay control and thyristor firing.

Features

CA3081 - Common Emitter Array CA3082 - Common Collector Array Directly Drive Seven Segment Incandescent Displays and Light Emitting Diode (LED) Display 7 Transistors Permit a Wide Range of Applications in Either a Common Emitter (CA3081) or Common Collector (CA3082) Configuration High IC. 100mA (Max) Low VCESAT (at 50mA). 0.4V (Typ)

PART NUMBER (BRAND) CA3082M96 (3082) TEMP. RANGE (oC) to 125 PACKAGE 16 Ld PDIP 16 Ld CERDIP 16 Ld SOIC 16 Ld PDIP 16 Ld SOIC 16 Ld SOIC Tape and Reel PKG. NO. E16.3 M16.15

Applications
Drivers for - Incandescent Display Devices - LED Displays Relay Control Thyristor Firing
CA3081 COMMON EMITTER CONFIGURATION (PDIP, CERDIP, SOIC) TOP VIEW
CA3082 COMMON COLLECTOR CONFIGURATION (PDIP, SOIC) TOP VIEW

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright � Intersil Corporation 1999

Collector-to-Emitter Voltage (VCEO).16V Collector-to-Base Voltage (VCBO). 20V Collector-to-Substrate Voltage (VCIO , Note 1). 20V Emitter-to-Base Voltage (VEBO). 5V Collector Current (IC). 100mA Base Current (IB). 20mA

Thermal Resistance (Typical, Note 2) JA (oC/W) JC (oC/W) CERDIP Package. 115 45 PDIP Package. 100 N/A SOIC Package. 190 N/A Maximum Power Dissipation (Any One Transistor). 500mW Maximum Junction Temperature (Ceramic Package).175oC Maximum Junction Temperature (Plastic Package).150oC Maximum Storage Temperature Range. to 150oC Maximum Lead Temperature (Soldering 10s). 300oC (SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES: 1. The collector of each transistor of the CA3081 and CA3082 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal (5) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. JA is measured with the component mounted on an evaluation PC board in free air.

For Equipment Design = 25oC SYMBOL V(BR)CBO V(BR)CIO V(BR)CEO V(BR)EBO hFE VBESAT VCESAT = 5mA ICEO ICBO VCE = 0 VCB V �A TEST CONDITIONS = 500�A VCE = 30mA VCE = 1mA MIN TYP MAX 1.2 UNITS

Collector-to-Base Breakdown Voltage Collector-to-Substrate Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage DC Forward Current Transfer Ratio

Base-to-Emitter Saturation Voltage (Figure 4) Collector-to-Emitter Saturation Voltage CA3082 CA3081 (Figure 5) CA3082 (Figure 5) Collector Cutoff Current Collector Cutoff Current

1/7 CA3082 (COMMON COLLECTOR) R (NOTE) LIGHT EMITTING DIODE (LED) V+ 1 SEGMENT OF INCANDESCENT DISPLAY (DR2000 SERIES OR EQUIVALENT) FROM DECODER 1/7 CA3081 (COMMON EMITTER)

BE LED R = -----------------------------------------------------I ( LED for BE LED ) Where: VP = Input Pulse Voltage VF = Forward Voltage Drop Across the Diode

FIGURE 1. SCHEMATIC DIAGRAM SHOWING ONE TRANSISTOR OF THE CA3081 DRIVING ONE SEGMENT OF AN INCANDESCENT DISPLAY

FIGURE 2. SCHEMATIC DIAGRAM SHOWING ONE TRANSISTOR OF THE CA3082 DRIVING A LIGHT EMITTING DIODE (LED)

100 VCE 3V 90 BASE-TO-EMITTER SATURATION VOLTAGE (V) DC FORWARD CURRENT TRANSFER RATIO (hFE) = 25oC hFE = 10

FIGURE 3. DC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT
FIGURE 4. BASE-TO-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
FIGURE 5. COLLECTOR-TO-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
FIGURE 6. COLLECTOR-TO-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT

Features

Parameters

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