HomedatasheetCD4052BPWR

CD4052BPWR Datasheet

CI di commutazione multiplexing
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Description

The CD4051B, CD4052BPWR , and CD4053B analog multiplexersare digitally-controlled analog switches having low ONimpedance and very low OFF leakage current. Control ofanalog signals up to 20VP-P can be achieved by digitalsignal amplitudes of 4.5V to 20V (if VDD-VSS = 3V, aVDD-VEE of up to 13V can be controlled; for VDD-VEE leveldifferences above 13V, a VDD-VSS of at least 4.5V isrequired). For example, if VDD = +4.5V, VSS = 0V, andVEE = -13.5V, analog signals from -13.5V to +4.5V can becontrolled by digital inputs of 0V to 5V. These multiplexercircuits dissipate extremely low quiescent power over thefull VDD-VSS and VDD-VEE supply-voltage ranges,independent of the logic state of the control signals. Whena logic “1” is present at the inhibit input terminal, allchannels are off.The CD4051B is a single 8-Channel multiplexer having threebinary control inputs, A, B, and C, and an inhibit input. Thethree binary signals select 1 of 8 channels to be turned on,and connect one of the 8 inputs to the output.The CD4052B is a differential 4-Channel multiplexer havingtwo binary control inputs, A and B, and an inhibit input. Thetwo binary input signals select 1 of 4 pairs of channels to beturned on and connect the analog inputs to the outputs.The CD4053B is a triple 2-Channel multiplexer having threeseparate digital control inputs, A, B, and C, and an inhibitinput. Each control input selects one of a pair of channelswhich are connected in a single-pole, double-throwconfiguration.When these devices are used as demultiplexers, the“CHANNEL IN/OUT” terminals are the outputs and the“COMMON OUT/IN” terminals are the inputs. CD4052BPWR Features • Wide Range of Digital and Analog Signal Levels- Digital . . . 3V to 20V- Analog. . . ≤20VP-P• Low ON Resistance, 125Ω (Typ) Over 15VP-P Signal InputRange for VDD-VEE = 18V• High OFF Resistance, Channel Leakage of ±100pA (Typ)at VDD-VEE = 18V• Logic-Level Conversion for Digital Addressing Signals of3V to 20V (VDD-VSS = 3V to 20V) to Switch AnalogSignals to 20VP-P (VDD-VEE = 20V)• Matched Switch Characteristics, rON = 5Ω (Typ) forVDD-VEE = 15V• Very Low Quiescent Power Dissipation Under All Digital-Control Input and Supply Conditions, 0.2μW (Typ) atVDD-VSS = VDD-VEE = 10V• Binary Address Decoding on Chip• 5V, 10V, and 15V Parametric Ratings• 100% Tested for Quiescent Current at 20V• Maximum Input Current of 1μA at 18V Over Full PackageTemperature Range, 100nA at 18V and 25oC• Break-Before-Make Switching Eliminates ChannelOverlap CD4052BPWR Applications • Analog and Digital Multiplexing and Demultiplexing• A/D and D/A Conversion• Signal Gating
Features

Parameters

[{"Name":"Numero di canali: ","Value":"2"},{"Name":"Numero di interruttori: ","Value":"2"},{"Name":"Resistenza a circuito chiuso (max): ","Value":"1050 Ohms "},{"Name":"Tempo di accensione (max): ","Value":"720 ns"},{"Name":"Tempo di spegnimento (max): ","Value":"450 ns "},{"Name":"Ritardo di propagazione: ","Value":"60 ns "},{"Name":"Tensione di alimentazione di lavoro: ","Value":"3 V to 20 V"},{"Name":"Temperatura di lavoro massima: ","Value":"+ 125 C "},{"Name":"Temperatura di lavoro minima: ","Value":"- 55 C"},{"Name":"","Value":""}]

Manufacturer information

DIODES INCORPORATED

Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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