to 5.5-V VCC Operation Fanout (Over Temperature Range) � Standard Outputs. 10 LS-TTL Loads � Bus-Driver Outputs. 15 LS-TTL Loads Wide Operating Temperature Range to 125�C Balanced Propagation Delays and Transition Times Significant Power Reduction Compared to LS-TTL Logic ICs HCT Types � Direct LSTTL Input Logic Compatibility, VIL 0.8 V (Max), VIH 2 V (Min) � CMOS Input Compatibility, �A at VOL, VOH
The CD74HCT4514 and CD74HCT4515 are high-speed silicon-gate devices consisting a 4-bit strobed latch and to 16-line decoder. The selected output is enabled by a low on the enable (E) input. A high on E inhibits selection of any output. Demultiplexing is accomplished by using E as the data input and the select inputs (A0�A3) as addresses. E also serves as a chip select when these devices are cascaded. When the latch enable (LE) is high, the output follows changes in the inputs (see decode function table). When LE is low, the output is isolated from changes in the input and remains at the level (high for the '4514, low for the '4515) it had before the latch was enabled. ORDERING INFORMATION
to 125�C PACKAGE PDIP � E Tube ORDERABLE PART NUMBER CD74HCT4514E CD74HCT4515E TOP-SIDE MARKING CD74HCT4514E CD74HCT4515E
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
DECODE FUNCTION TABLE (LE = H) DECODER INPUTS A1 A0 ADDRESSED OUTPUT Y14 Y15 All outputs L, CD74HCT4514 All outputs H, CD74HCT4515absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, VCC. 7 V Input clamp current, IIK (VI VI > VCC) (see Note �20 mA Output clamp current, IOK (VO VO > VCC) (see Note �20 mA Continuous output drain current per output, IO (VO 0 to VCC). �25 mA Continuous output source or sink current per output, IO (VO 0 to VCC). �25 mA Continuous current through VCC or GND. �50 mA Package thermal impedance, JA (see Note 2). 67�C/W Lead temperature mm (1/16 inch) from case for 10 seconds. 265�C Storage temperature range, Tstg. to 150�C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. The package thermal impedance is calculated in accordance with JESD 51-3.
= 25�C MIN VCC VIH VIL VI VO t/v Supply voltage High-level input voltage Low-level input voltage Input voltage Output voltage Input transition rise or fall rate VCC 500 0 MAX TO 125�C MIN 2 0.8 VCC 500 0 MAX TO 85�C MIN 2 0.8 VCC 500 MAX 5.5 ns UNIT
NOTE 3: All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
electrical characteristics over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS IOH �20 �A IOH �6 mA IOL 20 �A IOL = 0 Other inputs 0 or VCC = 25�C MIN VOH VOL II ICC VI = VIH or VIL VI = VIH or VIL VI = VCC VI = VCC or 0, One input at VCC 5.5 V MAX TO 125�C MIN MAX TO 85�C MIN MAX V �A UNIT
10 pF Additional quiescent supply current per input pin, TTL inputs high, 1 unit load. For dual-supply systems, theoretical worst-case (VI 2.4 V, VCC 5.5 V) specification is 1.8 mA.