1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 ZENER DIODE, 500mW LEADLESS PACKAGE FOR SURFACE MOUNT LOW REVERSE LEAKAGE CHARACTERISTICS METALLURGICALLY BONDED
Junction and Storage Temperature: +125�C DC Power Dissipation: mW @ TEC = +125�C Power Derating: / �C above TEC = +125�C Forward Voltage 200mA: 1.1 volts maximum ELECTRICAL CHARACTERISTICS @ 25�C, unless otherwise specified.MAX. ZENER IMPEDANCE B-C-D SUFFIX ZZT @ 1ZT (NOTE 3) OHMS
CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 �C/W maximum = 0 inch THERMAL IMPEDANCE: (ZOJX): 35 �C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/�C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device.
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF. Units with "A" suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with guaranteed limits for all six parameters are indicated by a "B" suffix for +5.0% units, "C" suffix for+2.0% and "D" suffix for +1.0%. Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature + 3�C. Zener impedance is derived by superimposing A 60Hz rms a.c. current equal 10% of1ZT.
Reverse leakage currents are measured VR as shown on the table. VZ is the maximum difference between VZ at lZT and VZ at lZL measured with the device junction in thermal equilibrium.
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