HomedatasheetCEG9926

CEG9926 Datasheet

N chanel
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Description

Features, Applications

Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES

RDS(ON)=40m @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package.

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS

Drain-Source On-State Resistance On-State Drain Current Forward Transconductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.



Features

Parameters


Manufacturer information

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